ICCAS OpenIR
Nanophotoswitches with a high on/off ratio based on a structure of indium tin oxide/organic insulator/metal
Xu, Xinjun1; Li, Lidong1; Yu, Gui2; Di, Chong-An2; Wei, Dacheng2; Ye, Shanghui2; Liu, Yunqi2
2008-01-28
Source PublicationAPPLIED PHYSICS LETTERS
ISSN0003-6951
Volume92Issue:4
AbstractHighly photosensitive nanoswitches with a structure of indium tin oxide/organic insulator/metal have been fabricated. Electric current in the photoswitches is sensitive to ultraviolet (UV) radiation, and can be inhibited and recovered by exposing the photoswitch to, or shielding it from, UV radiation, respectively. Photoswitches with a very high on/off ratio exceeding 10(6), which is the highest ratio recorded for all reported organic photoswitches, have been demonstrated under UV radiation even with a low power density (similar to 10(-5) W/cm(2)). (C) 2008 American Institute of Physics.
DOI10.1063/1.2839291
Indexed BySCI
Language英语
WOS IDWOS:000252860400107
PublisherAMER INST PHYSICS
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Cited Times:3[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.iccas.ac.cn/handle/121111/64648
Collection中国科学院化学研究所
Corresponding AuthorLi, Lidong
Affiliation1.Univ Sci & Technol Beijing, Sch Mat Sci & Engn, Beijing 100083, Peoples R China
2.Chinese Acad Sci, Inst Chem, Beijing Natl Lab Mol Sci, Beijing 100080, Peoples R China
Recommended Citation
GB/T 7714
Xu, Xinjun,Li, Lidong,Yu, Gui,et al. Nanophotoswitches with a high on/off ratio based on a structure of indium tin oxide/organic insulator/metal[J]. APPLIED PHYSICS LETTERS,2008,92(4).
APA Xu, Xinjun.,Li, Lidong.,Yu, Gui.,Di, Chong-An.,Wei, Dacheng.,...&Liu, Yunqi.(2008).Nanophotoswitches with a high on/off ratio based on a structure of indium tin oxide/organic insulator/metal.APPLIED PHYSICS LETTERS,92(4).
MLA Xu, Xinjun,et al."Nanophotoswitches with a high on/off ratio based on a structure of indium tin oxide/organic insulator/metal".APPLIED PHYSICS LETTERS 92.4(2008).
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