ICCAS OpenIR
Trifluoromethyltriphenodioxazine: Air-stable and high-performance n-type semiconductor
Di, Chong-an1; Li, Jing2; Yu, Gui1; Xiao, Yi2; Guo, Yunlong1; Liu, Yunqi1; Qian, Xuhong3,4; Zhu, Daoben1
2008-07-17
Source PublicationORGANIC LETTERS
ISSN1523-7060
Volume10Issue:14Pages:3025-3028
AbstractTwo trifluoromethyltriphenodioxazines were efficiently synthesized as active materials for n-type organic field-effect transistors, and their optical and electrochemical properties were characterized. Air-stable and high-performance thin film transistors based on the two compounds were fabricated.
DOI10.1021/ol8008667
Indexed BySCI ; IC
Language英语
WOS IDWOS:000257629200028
PublisherAMER CHEMICAL SOC
Citation statistics
Cited Times:48[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.iccas.ac.cn/handle/121111/64376
Collection中国科学院化学研究所
Corresponding AuthorYu, Gui
Affiliation1.Chinese Acad Sci, Inst Chem, Beijing Natl Lab Mol Sci, Beijing 100190, Peoples R China
2.Dalian Univ Technol, State Key Lab Fine Chem, Dalian 116012, Peoples R China
3.E China Univ Sci & Technol, Shanghai Key Lab Chem Biol, Shanghai 200237, Peoples R China
4.E China Univ Sci & Technol, State Key Lab Bioreactor Engn, Shanghai 200237, Peoples R China
Recommended Citation
GB/T 7714
Di, Chong-an,Li, Jing,Yu, Gui,et al. Trifluoromethyltriphenodioxazine: Air-stable and high-performance n-type semiconductor[J]. ORGANIC LETTERS,2008,10(14):3025-3028.
APA Di, Chong-an.,Li, Jing.,Yu, Gui.,Xiao, Yi.,Guo, Yunlong.,...&Zhu, Daoben.(2008).Trifluoromethyltriphenodioxazine: Air-stable and high-performance n-type semiconductor.ORGANIC LETTERS,10(14),3025-3028.
MLA Di, Chong-an,et al."Trifluoromethyltriphenodioxazine: Air-stable and high-performance n-type semiconductor".ORGANIC LETTERS 10.14(2008):3025-3028.
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