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Tin (IV) phthalocyanine oxide: An air-stable semiconductor with high electron mobility
Song, De; Zhu, Feng; Yu, Bo; Huang, Lizhen; Geng, Yanhou; Yana, Donghang
2008-04-07
Source PublicationAPPLIED PHYSICS LETTERS
ISSN0003-6951
Volume92Issue:14
AbstractAir-stable n-type field effect transistors were fabricated with an axially oxygen substituted metal phthalocyanine, tin (IV) phthalocyanine oxide (SnOPc), as active layers. The SnOPc thin films showed highly crystallinity on modified dielectric layer, and the electron field-effect mobility reached 0.44 cm(2) V(-1) s(-1). After storage in air for 32 days, the mobility and on/off ratio did not obviously change. The above results also indicated that it is an effective approach of seeking n-type semiconductor by incorporating the appropriate metal connected with electron-withdrawing group into pi-pi conjugated system. (C) 2008 American Institute of Physics.
DOI10.1063/1.2903486
Indexed BySCI
Language英语
WOS IDWOS:000254940500090
PublisherAMER INST PHYSICS
Citation statistics
Cited Times:26[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.iccas.ac.cn/handle/121111/63854
Collection中国科学院化学研究所
Corresponding AuthorYana, Donghang
AffiliationChinese Acad Sci, Grad Sch, Changchun Inst Appl Chem, State Key Lab Polymer Phys & Chem, Changchun 130022, Peoples R China
Recommended Citation
GB/T 7714
Song, De,Zhu, Feng,Yu, Bo,et al. Tin (IV) phthalocyanine oxide: An air-stable semiconductor with high electron mobility[J]. APPLIED PHYSICS LETTERS,2008,92(14).
APA Song, De,Zhu, Feng,Yu, Bo,Huang, Lizhen,Geng, Yanhou,&Yana, Donghang.(2008).Tin (IV) phthalocyanine oxide: An air-stable semiconductor with high electron mobility.APPLIED PHYSICS LETTERS,92(14).
MLA Song, De,et al."Tin (IV) phthalocyanine oxide: An air-stable semiconductor with high electron mobility".APPLIED PHYSICS LETTERS 92.14(2008).
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