ICCAS OpenIR
Realization of write-once-read-many-times memory devices based on poly(N-vinylcarbazole) by thermally annealing
Lin, Jian; Ma, Dongge
2008-09-01
Source PublicationAPPLIED PHYSICS LETTERS
ISSN0003-6951
Volume93Issue:9
AbstractA nonvolatile write-once-read-many-time (WORM-time) memory device based on poly(N-vinylcarbazole) (PVK) films was realized by thermally annealing. The device can be fabricated using a simple spin coat method. It was found that the control of PVK film surface morphology by thermally annealing plays an important role in achieving the WORM memory properties. The memory device showed an ON/OFF current ratio as high as 10(4) and the retention time was over 2000 s without degradation. The formation and damage of the interface dipole at different electric fields have been attributed to the switching transition processes, leading to the transition from an Ohmic current of ON state to a tunneling injection limited current of OFF state. The achievement of easily fabricating WORM memory device based on soluble PVK film opens up an application field for polymer materials in organic electronics. (c) 2008 American Institute of Physics.
DOI10.1063/1.2975157
Indexed BySCI
Language英语
WOS IDWOS:000258975800078
PublisherAMER INST PHYSICS
Citation statistics
Cited Times:37[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.iccas.ac.cn/handle/121111/63844
Collection中国科学院化学研究所
Corresponding AuthorLin, Jian
AffiliationChinese Acad Sci, Grad Sch, Changchun Inst Appl Chem, State Key Lab Polymer Phys & Chem, Changchun 130022, Peoples R China
Recommended Citation
GB/T 7714
Lin, Jian,Ma, Dongge. Realization of write-once-read-many-times memory devices based on poly(N-vinylcarbazole) by thermally annealing[J]. APPLIED PHYSICS LETTERS,2008,93(9).
APA Lin, Jian,&Ma, Dongge.(2008).Realization of write-once-read-many-times memory devices based on poly(N-vinylcarbazole) by thermally annealing.APPLIED PHYSICS LETTERS,93(9).
MLA Lin, Jian,et al."Realization of write-once-read-many-times memory devices based on poly(N-vinylcarbazole) by thermally annealing".APPLIED PHYSICS LETTERS 93.9(2008).
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