ICCAS OpenIR
Tuning of hole doping level of iodine-encapsulated single-walled carbon nanotubes by temperature adjustment
Wang, Zhiyong1; Wang, Lu2,3; Shi, Zujin1; Lu, Jing2,3; Gu, Zhennan1; Gao, Zhengxiang2,3
2008
Source PublicationCHEMICAL COMMUNICATIONS
ISSN1359-7345
Issue29Pages:3429-3431
AbstractWe present a simple approach of tuning the hole doping level of iodine-doped single-walled carbon nanotubes by adjusting temperature, utilizing the structural conversion of iodine species encapsulated in SWNTs.
DOI10.1039/b804964e
Indexed BySCI
Language英语
WOS IDWOS:000257722700024
PublisherROYAL SOC CHEMISTRY
Citation statistics
Cited Times:12[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.iccas.ac.cn/handle/121111/63764
Collection中国科学院化学研究所
Corresponding AuthorShi, Zujin
Affiliation1.Peking Univ, Beijing Natl Lab Mol Sci, State Key Lab Rare Earth Mat Chem & Applicat, Coll Chem & Mol Engn, Beijing 100871, Peoples R China
2.Peking Univ, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China
3.Peking Univ, Dept Phys, Beijing 100871, Peoples R China
Recommended Citation
GB/T 7714
Wang, Zhiyong,Wang, Lu,Shi, Zujin,et al. Tuning of hole doping level of iodine-encapsulated single-walled carbon nanotubes by temperature adjustment[J]. CHEMICAL COMMUNICATIONS,2008(29):3429-3431.
APA Wang, Zhiyong,Wang, Lu,Shi, Zujin,Lu, Jing,Gu, Zhennan,&Gao, Zhengxiang.(2008).Tuning of hole doping level of iodine-encapsulated single-walled carbon nanotubes by temperature adjustment.CHEMICAL COMMUNICATIONS(29),3429-3431.
MLA Wang, Zhiyong,et al."Tuning of hole doping level of iodine-encapsulated single-walled carbon nanotubes by temperature adjustment".CHEMICAL COMMUNICATIONS .29(2008):3429-3431.
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