ICCAS OpenIR
Highly symmetrical CdS tetrahedral nanocrystals prepared by low-temperature chemical vapor deposition using polysulfide as the sulfur source
Zheng, Jie1; Song, Xubo1; Chen, Nan1; Li, Xingguo1,2
2008-05-01
Source PublicationCRYSTAL GROWTH & DESIGN
ISSN1528-7483
Volume8Issue:5Pages:1760-1765
AbstractIn this paper, we report a new scheme for chemical vapor deposition (CVD) of CdS nanocrystals, in which polysulfide and cadmium chloride were used as the sulfur and cadmium source, respectively. During the reaction, hydrogen sulfide was generated by controlled hydrolysis of polysulfide and reacted with cadmium chloride to give CdS. Tetrahedral CdS nanocrystals with homogeneous size and nearly perfect T-d point group symmetry were obtained in high yield. The source and deposition temperature were only 540 and 400 degrees C, respectively, which were significantly lower than those in conventional CVD methods. The low deposition temperature was found critical for the formation of the tetrahedral nanostructures. The photoluminescence spectra of the tetrahedral nanocrystals consisted of a sharp band edge emission peak and a broad band related to trapped states.
DOI10.1021/cg700804t
Indexed BySCI
Language英语
WOS IDWOS:000255649700056
PublisherAMER CHEMICAL SOC
Citation statistics
Cited Times:12[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.iccas.ac.cn/handle/121111/63456
Collection中国科学院化学研究所
Corresponding AuthorLi, Xingguo
Affiliation1.Peking Univ, Coll Chem & Mol Engn, State Key Lab Rare Earth Mat Chem & Applicat, BNLMS, Beijing 100871, Peoples R China
2.Peking Univ, Coll Engn, Beijing 100871, Peoples R China
Recommended Citation
GB/T 7714
Zheng, Jie,Song, Xubo,Chen, Nan,et al. Highly symmetrical CdS tetrahedral nanocrystals prepared by low-temperature chemical vapor deposition using polysulfide as the sulfur source[J]. CRYSTAL GROWTH & DESIGN,2008,8(5):1760-1765.
APA Zheng, Jie,Song, Xubo,Chen, Nan,&Li, Xingguo.(2008).Highly symmetrical CdS tetrahedral nanocrystals prepared by low-temperature chemical vapor deposition using polysulfide as the sulfur source.CRYSTAL GROWTH & DESIGN,8(5),1760-1765.
MLA Zheng, Jie,et al."Highly symmetrical CdS tetrahedral nanocrystals prepared by low-temperature chemical vapor deposition using polysulfide as the sulfur source".CRYSTAL GROWTH & DESIGN 8.5(2008):1760-1765.
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