ICCAS OpenIR
Performance improvement of organic thin film transistors based on gate insulator polymethyl-methacrylate-co-glyciclyl-methacrylate
Liu Xue-Qiang1; Zhang Tong1; Wang Li-Jie1; Li Ming-You1; Feng Chen-Gang1,2; Ma Dong-Ge2
2008-02-01
Source PublicationCHINESE PHYSICS LETTERS
ISSN0256-307X
Volume25Issue:2Pages:758-761
AbstractOrganic thin transistors (OTFTs) on indium tin oxide glass substrates are prepared with polymethyl-methacrylate-co-glyciclyl-methacrylate (PMMA-GMA) as the gate insulator layer and copper phthalocyanine as the organic semiconductor layer. By controlling the thickness, the average roughness of surface is reduced and the OTFT performance is improved with leak current decreasing to 10(-11) A and on/off ratio of 10(4). Under the condition of drain-source voltage -20 V, a threshold voltage of -3.5 V is obtained. The experimental results show that PMMA-GMA is a promising insulator material with a dielectric constant in a range of 3.9-5.0.
Indexed BySCI
Language英语
WOS IDWOS:000253316600110
PublisherIOP PUBLISHING LTD
Citation statistics
Cited Times:5[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.iccas.ac.cn/handle/121111/63038
Collection中国科学院化学研究所
Corresponding AuthorZhang Tong
Affiliation1.Jilin Univ, Coll Elect Sci & Engn, State Key Lab Integrated Optelect, Changchun 130023, Peoples R China
2.Chinese Acad Sci, Changchun Inst Appl Chem, State Key Lab Polymer Phys & Chem, Changchun 130022, Peoples R China
Recommended Citation
GB/T 7714
Liu Xue-Qiang,Zhang Tong,Wang Li-Jie,et al. Performance improvement of organic thin film transistors based on gate insulator polymethyl-methacrylate-co-glyciclyl-methacrylate[J]. CHINESE PHYSICS LETTERS,2008,25(2):758-761.
APA Liu Xue-Qiang,Zhang Tong,Wang Li-Jie,Li Ming-You,Feng Chen-Gang,&Ma Dong-Ge.(2008).Performance improvement of organic thin film transistors based on gate insulator polymethyl-methacrylate-co-glyciclyl-methacrylate.CHINESE PHYSICS LETTERS,25(2),758-761.
MLA Liu Xue-Qiang,et al."Performance improvement of organic thin film transistors based on gate insulator polymethyl-methacrylate-co-glyciclyl-methacrylate".CHINESE PHYSICS LETTERS 25.2(2008):758-761.
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