ICCAS OpenIR
Improvement of sub-threshold current models for a-SM thin-film transistors
Wang, Lijuan; Zhu, Jiang; Liu, Chunling; Liu, Guojun; Shao, Xibin; Yan, Donghang
2007-05-01
Source PublicationSOLID-STATE ELECTRONICS
ISSN0038-1101
Volume51Issue:5Pages:703-707
AbstractThe improved sub-threshold drain-source current models of a-Si:H thin-film transistors (TFTs) is demonstrated in this paper. The current-voltage (I-P) characteristics of a-Si:H TFTs are revealed in both forward and reverse sub-threshold region. The I-Vcharacteristics exhibit a strong dependence on the gate-source voltage (VGs) and the drain-source voltage (VDs). The effects of weak electron distribution and a lateral component of the electric field on the a-Si:H TFT characteristics, which are induced by VDS at both front and back interface, are considered in current model. This strong dependence of the sub-threshold current on VDs is attributed to the channel length, drain-gate overlap vicinity, and process condition. Simulated results based on the model exhibit a good agreement with measured experimental data. The proposed model and the modeling process will be very useful for practical TFTs simulation. (c) 2007 Elsevier Ltd. All rights reserved.
KeywordA-si : h Tft Model Sub-threshold Drain-source Voltage
DOI10.1016/j.sse.2007.02.030
Indexed BySCI
Language英语
WOS IDWOS:000247353200011
PublisherPERGAMON-ELSEVIER SCIENCE LTD
Citation statistics
Cited Times:3[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.iccas.ac.cn/handle/121111/62964
Collection中国科学院化学研究所
Corresponding AuthorWang, Lijuan
Affiliation1.Changchun Univ Sci & Technol, State Key Lab High Power Semicond Lasers, Changchun 130022, Peoples R China
2.Chinese Acad Sci, Fine Mech & Phys, Changchun Inst Opt, Changchun 130033, Peoples R China
3.Chinese Acad Sci, Fine Mech & Phys, State Key Lab Polymer Phys & Chem, Changchun 130033, Peoples R China
Recommended Citation
GB/T 7714
Wang, Lijuan,Zhu, Jiang,Liu, Chunling,et al. Improvement of sub-threshold current models for a-SM thin-film transistors[J]. SOLID-STATE ELECTRONICS,2007,51(5):703-707.
APA Wang, Lijuan,Zhu, Jiang,Liu, Chunling,Liu, Guojun,Shao, Xibin,&Yan, Donghang.(2007).Improvement of sub-threshold current models for a-SM thin-film transistors.SOLID-STATE ELECTRONICS,51(5),703-707.
MLA Wang, Lijuan,et al."Improvement of sub-threshold current models for a-SM thin-film transistors".SOLID-STATE ELECTRONICS 51.5(2007):703-707.
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