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Improvement of sub-threshold current models for a-SM thin-film transistors | |
Wang, Lijuan; Zhu, Jiang; Liu, Chunling; Liu, Guojun; Shao, Xibin; Yan, Donghang | |
2007-05-01 | |
Source Publication | SOLID-STATE ELECTRONICS
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ISSN | 0038-1101 |
Volume | 51Issue:5Pages:703-707 |
Abstract | The improved sub-threshold drain-source current models of a-Si:H thin-film transistors (TFTs) is demonstrated in this paper. The current-voltage (I-P) characteristics of a-Si:H TFTs are revealed in both forward and reverse sub-threshold region. The I-Vcharacteristics exhibit a strong dependence on the gate-source voltage (VGs) and the drain-source voltage (VDs). The effects of weak electron distribution and a lateral component of the electric field on the a-Si:H TFT characteristics, which are induced by VDS at both front and back interface, are considered in current model. This strong dependence of the sub-threshold current on VDs is attributed to the channel length, drain-gate overlap vicinity, and process condition. Simulated results based on the model exhibit a good agreement with measured experimental data. The proposed model and the modeling process will be very useful for practical TFTs simulation. (c) 2007 Elsevier Ltd. All rights reserved. |
Keyword | A-si : h Tft Model Sub-threshold Drain-source Voltage |
DOI | 10.1016/j.sse.2007.02.030 |
Indexed By | SCI |
Language | 英语 |
WOS ID | WOS:000247353200011 |
Publisher | PERGAMON-ELSEVIER SCIENCE LTD |
Citation statistics | |
Document Type | 期刊论文 |
Identifier | http://ir.iccas.ac.cn/handle/121111/62964 |
Collection | 中国科学院化学研究所 |
Corresponding Author | Wang, Lijuan |
Affiliation | 1.Changchun Univ Sci & Technol, State Key Lab High Power Semicond Lasers, Changchun 130022, Peoples R China 2.Chinese Acad Sci, Fine Mech & Phys, Changchun Inst Opt, Changchun 130033, Peoples R China 3.Chinese Acad Sci, Fine Mech & Phys, State Key Lab Polymer Phys & Chem, Changchun 130033, Peoples R China |
Recommended Citation GB/T 7714 | Wang, Lijuan,Zhu, Jiang,Liu, Chunling,et al. Improvement of sub-threshold current models for a-SM thin-film transistors[J]. SOLID-STATE ELECTRONICS,2007,51(5):703-707. |
APA | Wang, Lijuan,Zhu, Jiang,Liu, Chunling,Liu, Guojun,Shao, Xibin,&Yan, Donghang.(2007).Improvement of sub-threshold current models for a-SM thin-film transistors.SOLID-STATE ELECTRONICS,51(5),703-707. |
MLA | Wang, Lijuan,et al."Improvement of sub-threshold current models for a-SM thin-film transistors".SOLID-STATE ELECTRONICS 51.5(2007):703-707. |
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