ICCAS OpenIR
Ti-doped copper nitride films deposited by cylindrical magnetron sputtering
Fan, X. Y.; Wu, Z. G.; Zhang, G. A.; Li, C.; Geng, B. S.; Li, H. J.; Yan, P. X.
2007-08-16
Source PublicationJOURNAL OF ALLOYS AND COMPOUNDS
ISSN0925-8388
Volume440Issue:1-2Pages:254-258
AbstractPure and Ti-doped copper nitride films were prepared by cylindrical magnetron sputtering on glass substrates at room temperature. The preferred orientation for copper nitride films changes from [111] for undoped film to [100] for Ti-doped films. The variation of surface morphology correlates to that of preferred orientation resulting from the variation of Ti-doped content. The electrical resistivity and optical band gap increases as the Ti-doped content increases. (c) 2006 Elsevier B.V. All rights reserved.
KeywordCopper Nitride Surface Morphology Electrical Resistivity Optical Band Gap
DOI10.1016/j.jallcom.2006.09.006
Indexed BySCI
Language英语
WOS IDWOS:000248028300052
PublisherELSEVIER SCIENCE SA
Citation statistics
Cited Times:26[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.iccas.ac.cn/handle/121111/62576
Collection中国科学院化学研究所
Corresponding AuthorYan, P. X.
Affiliation1.Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 730000, Peoples R China
2.Chinese Acad Sci, Inst Chem & Phys, Key Lab Solid Lubricat, Lanzhou 730000, Peoples R China
Recommended Citation
GB/T 7714
Fan, X. Y.,Wu, Z. G.,Zhang, G. A.,et al. Ti-doped copper nitride films deposited by cylindrical magnetron sputtering[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2007,440(1-2):254-258.
APA Fan, X. Y..,Wu, Z. G..,Zhang, G. A..,Li, C..,Geng, B. S..,...&Yan, P. X..(2007).Ti-doped copper nitride films deposited by cylindrical magnetron sputtering.JOURNAL OF ALLOYS AND COMPOUNDS,440(1-2),254-258.
MLA Fan, X. Y.,et al."Ti-doped copper nitride films deposited by cylindrical magnetron sputtering".JOURNAL OF ALLOYS AND COMPOUNDS 440.1-2(2007):254-258.
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