ICCAS OpenIR
High-mobility, air stable bottom-contact n-channel thin film transistors based on N,N '-ditridecyl perylene diimide
Ma, Lanchao1,2; Guo, Yunlong1; Wen, Yugeng1; Liu, Yunqi1; Zhan, Xiaowei1,3
2013-11-11
Source PublicationAPPLIED PHYSICS LETTERS
ISSN0003-6951
Volume103Issue:20
AbstractBottom-gate bottom-contact (BGBC) organic thin film transistors (OTFTs) based on N, N '-ditridecyl perylene diimide exhibit electron mobility as high as 3.54 cm(2) V-1 s(-1) in nitrogen, higher than that (1 cm(2) V-1 s(-1)) of bottom-gate top-contact devices. The better performance of BGBC configuration in N-2 is attributed to lower contact resistance, which is further reduced by thermal annealing. After thermally annealing the BGBC OTFTs at 180 degrees C, electron mobility as high as 3.5 cm(2) V-1 s(-1), current on/off ratio of 10(6) and threshold voltage of 9V are achieved in air, and the mobility retains above 1 cm(2) V-1 s(-1) after storage for two months in air. Thermal treatment enhanced crystalline grains, reduced grain boundaries, and suppressed the adsorption of H2O and O-2, leading to excellent performance in air. (C) 2013 AIP Publishing LLC.
DOI10.1063/1.4831971
Indexed BySCI
Language英语
WOS IDWOS:000327818700093
PublisherAMER INST PHYSICS
Citation statistics
Cited Times:13[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.iccas.ac.cn/handle/121111/54548
Collection中国科学院化学研究所
Corresponding AuthorLiu, Yunqi
Affiliation1.Chinese Acad Sci, Inst Chem, Key Lab Organ Solids, Beijing Natl Lab Mol Sci, Beijing 100190, Peoples R China
2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
3.Peking Univ, Coll Engn, Dept Mat Sci & Engn, Beijing 100871, Peoples R China
Recommended Citation
GB/T 7714
Ma, Lanchao,Guo, Yunlong,Wen, Yugeng,et al. High-mobility, air stable bottom-contact n-channel thin film transistors based on N,N '-ditridecyl perylene diimide[J]. APPLIED PHYSICS LETTERS,2013,103(20).
APA Ma, Lanchao,Guo, Yunlong,Wen, Yugeng,Liu, Yunqi,&Zhan, Xiaowei.(2013).High-mobility, air stable bottom-contact n-channel thin film transistors based on N,N '-ditridecyl perylene diimide.APPLIED PHYSICS LETTERS,103(20).
MLA Ma, Lanchao,et al."High-mobility, air stable bottom-contact n-channel thin film transistors based on N,N '-ditridecyl perylene diimide".APPLIED PHYSICS LETTERS 103.20(2013).
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