ICCAS OpenIR
Improved interfacial and electrical properties of vanadyl-phthalocyanine metal-insulator-semiconductor devices with silicon nitride as gate insulator
Wang, Lijuan1; Li, Yiping2; Song, Xiaofeng1; Liu, Xin1; Zhang, Long1; Yan, Donghang3
2013-12-09
Source PublicationAPPLIED PHYSICS LETTERS
ISSN0003-6951
Volume103Issue:24
AbstractWe have investigated the interfacial and electrical properties of vanadyl-phthalocyanine (VOPc) metal-insulator-semiconductor devices by the measurement of capacitance and conductance. The devices have been fabricated on ordered para-sexiphenyl (p-6P) layer with silicon nitride (SiNx) as gate insulator. The VOPc/p-6P/SiNx devices have shown a negligible hysteresis, low series resistance, and high operated frequency. Bulk traps have been distinguished from interface traps by two loss peaks in conductance measurement. Trap densities and distribution of trap energy level have been obtained. The improved properties indicate that VOPc/p-6P devices with SiNx insulator hold a great promise of application in flexible displays. (C) 2013 AIP Publishing LLC.
DOI10.1063/1.4845815
Indexed BySCI
Language英语
WOS IDWOS:000328706500084
PublisherAMER INST PHYSICS
Citation statistics
Cited Times:2[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.iccas.ac.cn/handle/121111/46790
Collection中国科学院化学研究所
Corresponding AuthorWang, Lijuan
Affiliation1.Changchun Univ Technol, Sch Chem Engn, Changchun 130012, Peoples R China
2.Changchun Univ Sci & Technol, Sch Sci, Changchun 130022, Peoples R China
3.Chinese Acad Sci, Changchun Inst Appl Chem, State Key Lab Polymer Phys & Chem, Changchun 130022, Peoples R China
Recommended Citation
GB/T 7714
Wang, Lijuan,Li, Yiping,Song, Xiaofeng,et al. Improved interfacial and electrical properties of vanadyl-phthalocyanine metal-insulator-semiconductor devices with silicon nitride as gate insulator[J]. APPLIED PHYSICS LETTERS,2013,103(24).
APA Wang, Lijuan,Li, Yiping,Song, Xiaofeng,Liu, Xin,Zhang, Long,&Yan, Donghang.(2013).Improved interfacial and electrical properties of vanadyl-phthalocyanine metal-insulator-semiconductor devices with silicon nitride as gate insulator.APPLIED PHYSICS LETTERS,103(24).
MLA Wang, Lijuan,et al."Improved interfacial and electrical properties of vanadyl-phthalocyanine metal-insulator-semiconductor devices with silicon nitride as gate insulator".APPLIED PHYSICS LETTERS 103.24(2013).
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