ICCAS OpenIR
Low-Temperature Heteroepitaxy of 2D PbI2/Graphene for Large-Area Flexible Photodetectors
Zhang, Jincan1,2; Huang, Yucheng1; Tan, Zhenjun1,2; Li, Tianran1; Zhang, Yichi1; Jia, Kaicheng1; Lin, Li1; Sun, Luzhao1,2; Chen, Xiwen3,4; Li, Zhenzhu3,4; Tan, Congwei1,2; Zhang, Jinxia1; Zheng, Liming1; Wu, Yue1; Deng, Bing1; Chen, Zhaolong1; Liu, Zhongfan1,5; Peng, Hailin1,5
2018-09-06
Source PublicationADVANCED MATERIALS
ISSN0935-9648
Volume30Issue:36
AbstractHeterostructures based on graphene and other 2D atomic crystals exhibit fascinating properties and intriguing potential in flexible optoelectronics, where graphene films function as transparent electrodes and other building blocks are used as photoactive materials. However, large-scale production of such heterostructures with superior performance is still in early stages. Herein, for the first time, the preparation of a submeter-sized, vertically stacked heterojunction of lead iodide (PbI2)/graphene on a flexible polyethylene terephthalate (PET) film by vapor deposition of PbI2 on graphene/PET substrate at a temperature lower than 200 degrees C is demonstrated. This film is subsequently used to fabricate bendable graphene/PbI2/graphene sandwiched photodetectors, which exhibit high responsivity (45 A W-1 cm(-2)), fast response (35 mu s rise, 20 mu s decay), and high-resolution imaging capability (1 mu m). This study may pave a facile pathway for scalable production of high-performance flexible devices.
KeywordFlexible Photodetector Graphene Heteroepitaxy Imaging Lead Iodide
DOI10.1002/adma.201803194
Indexed BySCI
Language英语
WOS IDWOS:000443377100025
PublisherWILEY-V C H VERLAG GMBH
Citation statistics
Cited Times:13[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.iccas.ac.cn/handle/121111/42282
Collection中国科学院化学研究所
Corresponding AuthorLiu, Zhongfan; Peng, Hailin
Affiliation1.Peking Univ, Coll Chem & Mol Engn, Beijing Natl Lab Mol Sci, Ctr Nanochem,Beijing Sci & Engn Ctr Nanocarbons, Beijing 100871, Peoples R China
2.Peking Univ, Acad Adv Interdisciplinary Studies, Beijing 100871, Peoples R China
3.Soochow Univ, Soochow Inst Energy & Mat Innovat SIEMIS, Coll Phys Optoelect & Energy, Suzhou 215006, Peoples R China
4.Soochow Univ, Collaborat Innovat Ctr Suzhou Nano Sci & Technol, Suzhou 215006, Peoples R China
5.BGI, Beijing 100194, Peoples R China
Recommended Citation
GB/T 7714
Zhang, Jincan,Huang, Yucheng,Tan, Zhenjun,et al. Low-Temperature Heteroepitaxy of 2D PbI2/Graphene for Large-Area Flexible Photodetectors[J]. ADVANCED MATERIALS,2018,30(36).
APA Zhang, Jincan.,Huang, Yucheng.,Tan, Zhenjun.,Li, Tianran.,Zhang, Yichi.,...&Peng, Hailin.(2018).Low-Temperature Heteroepitaxy of 2D PbI2/Graphene for Large-Area Flexible Photodetectors.ADVANCED MATERIALS,30(36).
MLA Zhang, Jincan,et al."Low-Temperature Heteroepitaxy of 2D PbI2/Graphene for Large-Area Flexible Photodetectors".ADVANCED MATERIALS 30.36(2018).
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