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题名: Observation of positive and small electron affinity of Si-doped AlN films grown by metalorganic chemical vapor deposition on n-type 6H-SiC
作者: Liang, Feng1; Chen, Ping1; Zhao, De-Gang1; Jiang, De-Sheng1; Zhao, Zhi-Juan2; Liu, Zong-Shun1; Zhu, Jian-Jun1; Yang, Jing1; Liu, Wei1; He, Xiao-Guang1; Li, Xiao-Jing1; Li, Xiang1; Liu, Shuang-Tao1; Yang, Hui3; Zhang, Li-Qun3; Liu, Jian-Ping3; Zhang, Yuan-Tao4; Du, Guo-Tong4
关键词: AlN ; electron affinity ; photoelectron spectroscopy ; metalorganic chemical vapor deposition
刊名: CHINESE PHYSICS B
发表日期: 2016-05-01
卷: 25, 期:5
收录类别: SCI
英文摘要: We have investigated the electron affinity of Si-doped AlN films (N-Si = 1.0 x 10(18)-1.0 x 10(19) cm(-3)) with thicknesses of 50, 200, and 400 nm, synthesized by metalorganic chemical vapor deposition (MOCVD) under low pressure on the n-type (001)6H-SiC substrates. The positive and small electron affinity of AlN films was observed through the ultraviolet photoelectron spectroscopy (UPS) analysis, where an increase in electron affinity appears with the thickness of AlN films increasing, i.e., 0.36 eV for the 50-nm-thick one, 0.58 eV for the 200-nm-thick one, and 0.97 eV for the 400-nm-thick one. Accompanying the x-ray photoelectron spectroscopy (XPS) analysis on the surface contaminations, it suggests that the difference of electron affinity between our three samples may result from the discrepancy of surface impurity contaminations.
语种: 英语
内容类型: 期刊论文
URI标识: http://ir.iccas.ac.cn/handle/121111/36088
Appears in Collections:分析测试中心_期刊论文

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作者单位: 1.Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
2.Chinese Acad Sci, Inst Chem, Ctr Physicochem Anal & Measurement, Beijing 100190, Peoples R China
3.Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China
4.Jilin Univ, Coll Elect Sci & Engn, State Key Lab Integrated Optoelect, Changchun 130023, Peoples R China
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