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题名: Direct preparation of high quality graphene on dielectric substrates
作者: Chen, Xin1, 2; Wu, Bin1; Liu, Yunqi1
刊名: CHEMICAL SOCIETY REVIEWS
发表日期: 2016
卷: 45, 期:8, 页:2057-2074
收录类别: SCI
英文摘要: Graphene, an amazing two-dimensional material with excellent physical properties, has attracted great attention in various disciplines. Both fundamental studies and applications require graphene samples with controlled parameters including their quality, size, crystallinity, layer number and so on. While graphene can be prepared by direct exfoliation from mother materials or growth on transition metals, the uncontrolled production or the additional complex transfer process has been challenging for graphene applications. Direct preparation on a desired dielectric substrate is an important research direction that potentially addresses these problems. Many advances have been made in the past few years, and this tutorial review provides a brief summary of ways of preparing graphene on dielectric substrates. Various methods including the annealing method, direct chemical vapor deposition graphene synthesis on conventional dielectric substrates and hexagonal boron nitride layers are systematically reviewed and discussed. The main problems and further directions in this field are also presented.
语种: 英语
内容类型: 期刊论文
URI标识: http://ir.iccas.ac.cn/handle/121111/36056
Appears in Collections:有机固体实验室_期刊论文

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作者单位: 1.Chinese Acad Sci, Beijing Natl Lab Mol Sci, Inst Chem, Key Lab Organ Solids, Beijing 100190, Peoples R China
2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
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