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题名: Effect of fluorine substitution on naphtho[2,1-b:3,4-b ']bis [1]-benzothiophene-derived semiconductors for transistor application
作者: Li, Zhaoguang1, 2; Zhang, Ji3; Zhang, Weifeng3; Guo, Lei1, 2; Huang, Jianyao3; Yu, Gui3; Wong, Man Shing1, 2
关键词: Organic field-effect transistor ; Organic semiconductor ; Thienoacene ; Fluorine substitution ; Hole mobility
刊名: ORGANIC ELECTRONICS
发表日期: 2016-05-01
卷: 32, 页:47-53
收录类别: SCI
英文摘要: A novel series of air-stable, fluorinated naphtho [2,1-b: 3,4-b']bis [1]-benzothiophenes bearing various lateral alkoxy-substituents, NBBTF-n (n = 8, 10, and 12) and its unsubstituted analogue, NBBT-10 were synthesized and investigated with field-effect transistor properties. Fluorine substitution affords desirable properties including high melting transition, high thermal stability and low-lying highest occupied molecular orbital (HOMO) energy levels for air-stable semiconductors. The OFET devices based on annealed NBBTF-10 films exhibit superior hole transport with mobility up to 0.35 cm(2) V-1 s(-1) to that of NBBT-10, attributed to the close molecular stacking induced by fluorine substitution. (C) 2016 Elsevier B.V. All rights reserved.
语种: 英语
内容类型: 期刊论文
URI标识: http://ir.iccas.ac.cn/handle/121111/35968
Appears in Collections:有机固体实验室_期刊论文

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作者单位: 1.Hong Kong Baptist Univ, Inst Mol Funct Mat, Dept Chem, Kowloon Tong, Peoples R China
2.Hong Kong Baptist Univ, Inst Adv Mat, Kowloon Tong, Peoples R China
3.Chinese Acad Sci, Beijing Natl Lab Mol Sci, Inst Chem, Beijing 100190, Peoples R China
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