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题名: Epitaxially-crystallized oriented naphthalene bis(dicarboximide) morphology for significant performance improvement of electron-transporting thin-film transistors
作者: Liu, Lili1; Ren, Zhongjie1; Xiao, Chengyi2; He, Bing1; Dong, Huanli2; Yan, Shouke1; Hu, Wenping2; Wang, Zhaohui2
刊名: CHEMICAL COMMUNICATIONS
发表日期: 2016
卷: 52, 期:27, 页:4902-4905
收录类别: SCI
英文摘要: Large-area highly-ordered F-NDI films were obtained by epitaxial-crystallization on highly-oriented PE substrates through vacuum deposition. An electron mobility of 0.2 cm(2) V-1 s(-1) was achieved based on such epitaxially-crystallized F-NDI films, which is 4 times higher than that of its un-oriented thin film devices.
语种: 英语
内容类型: 期刊论文
URI标识: http://ir.iccas.ac.cn/handle/121111/35952
Appears in Collections:有机固体实验室_期刊论文

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作者单位: 1.Beijing Univ Chem Technol, State Key Lab Chem Resource Engn, Beijing 100029, Peoples R China
2.Chinese Acad Sci, Beijing Natl Lab Mol Sci, Inst Chem, Beijing 100190, Peoples R China
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