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题名: Surface-induced highly oriented perylo[1,12-b,c,d]selenophene thin films for high performance organic field-effect transistors
作者: Liu, Lili1; Ren, Zhongjie1; Xiao, Chengyi2; Dong, Huanli2; Yan, Shouke1; Hu, Wenping2; Wang, Zhaohui2
关键词: Perylo[1,12-b,c,d]selenophene ; Epitaxial crystallization ; Oriented thin film ; Organic field-effect transistors (OFETs)
刊名: ORGANIC ELECTRONICS
发表日期: 2016-08-01
卷: 35, 页:186-192
收录类别: SCI
英文摘要: Epitaxial crystallization of perylo[1,12-b,c,d]selenophene (PESE) on highly oriented polyethylene (PE) substrate through vapor phase deposition has been achieved. Oriented PESE crystals with different crystalline morphologies can be fabricated by changing the temperature of PE substrate during vacuum evaporation. When the PE substrate temperature is lower than 70 degrees C, sparsely dispersed PESE lathlike crystals are produced with their long axis preferentially aligned perpendicular to the chain direction of PE crystals. While the close films of PESE with lathlike crystals aligned with long axis parallel to the chain direction of PE film were obtained above 90 degrees C. Transistors based on expitaxially crystallized PESE films have been fabricated and the transistor properties were also studied. It is found that transistors show different electrical characteristics depending on the preparation conditions of expitaxially crystallized PESE films. The transistors based on the PESE/PE-SiO2/Si with PESE deposited on oriented PE film at low temperature, i.e., <70 degrees C, display a similar poor properties with the PESE/OTS-SiO2/Si type transistors. However, when the deposition temperature was elevated to 90 degrees C, the transistors exhibit a maximum field-effect mobility of 4.4 x 10(-2) cm(2) V-1 s(-1) and maximum on/off ratio of 2.0 x 10(5), which are about 2 orders of magnitudes higher than the PESE/OTS-SiO2/Si based transistors. (C) 2016 Elsevier B.V. All rights reserved.
语种: 英语
内容类型: 期刊论文
URI标识: http://ir.iccas.ac.cn/handle/121111/35781
Appears in Collections:有机固体实验室_期刊论文

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作者单位: 1.Beijing Univ Chem Technol, State Key Lab Chem Resource Engn, Beijing 100029, Peoples R China
2.Chinese Acad Sci, Beijing Natl Lab Mol Sci, Inst Chem, Beijing 100190, Peoples R China
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