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题名: High mobility multibit nonvolatile memory elements based organic field effect transistors with large hysteresis
作者: Zhang, Yong1; Lang, Caili1; Fan, Jingze1; Shi, Lei2; Yi, Yuanping3; Yu, Qingjiang1; Guo, Fengyun1; Wang, Jinzhong1; Zhao, Liancheng1
关键词: Multibit nonvolatile memory ; Polyquinoline ; Organic field effect transistor
刊名: ORGANIC ELECTRONICS
发表日期: 2016-08-01
卷: 35, 页:53-58
收录类别: SCI
英文摘要: High mobility multibit nonvolatile memory elements based on organic field effect transistors with a thin layer of polyquinoline (PQ) were reported. The devices show a high mobility of 1.5 cm(2) V-1 s(-1) in the saturation region which is among the best reported for nonvolatile organic memory transistors. The multibit nonvolatile memory elements can be operated at voltage less than 100 V with good stability under continuous operation condition and show long retention time. The different initial scanning positive gate voltages to 100 V result in several ON states, while the scanning gate voltage from 100 V to positive voltage leads to same OFF state. The charge trapping model of electrons into the PQ layer was used to explain the origin of the memory properties. (C) 2016 Elsevier B.V. All rights reserved.
语种: 英语
内容类型: 期刊论文
URI标识: http://ir.iccas.ac.cn/handle/121111/35780
Appears in Collections:有机固体实验室_期刊论文

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作者单位: 1.Harbin Inst Technol, Sch Mat Sci & Engn, Harbin 150001, Heilongjiang, Peoples R China
2.Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Anhui, Peoples R China
3.Chinese Acad Sci, Beijing Natl Lab Mol Sci, Inst Chem, CAS Key Lab Organ Solids, Beijing 100190, Peoples R China
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