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题名: XPS study of impurities in Si-doped AlN film
作者: Liang, F.1; Chen, P.1; Zhao, D. G.1; Jiang, D. S.1; Zhao, Z. J.2; Liu, Z. S.1; Zhu, J. J.1; Yang, J.1; Le, L. C.1; Liu, W.1; He, X. G.1; Li, X. J.1; Li, X.1; Liu, S. T.1; Yang, H.3; Liu, J. P.3; Zhang, L. Q.3; Zhang, Y. T.4; Du, G. T.4
关键词: AlN ; XPS ; MOCVD
刊名: SURFACE AND INTERFACE ANALYSIS
发表日期: 2016-12-01
卷: 48, 期:12, 页:1305-1309
收录类别: SCI
英文摘要: This paper reports an XPS study of impurities in a 100-nm-thick AlN film grown by metalorganic chemical vapor deposition (MOCVD) under low pressure on the n-type 6H-SiC substrate. The Si-doped AlN film was characterized by the X-ray photoelectron spectroscopy (XPS) in a high vacuum system, which reveals the content distribution and chemical states of impurities along depth. The XPS analysis of AlN film before and after argon-ion etching indicates that there always exist Ga, O and C contaminations in AlN film. Especially, O contamination on the AlN film surface is mostly introduced during the growth of AlN layer by MOCVD. Meanwhile, most of O atoms bind with Al or Ga in Al?O and Ga?O chemical states. In particular, the Ga atoms in AlN film are always in two chemical states, i.e. Ga?Ga bond and Ga?O bond, which demonstrates that the aggregation of Ga is accompanying with AlN growth. Copyright (c) 2016 John Wiley & Sons, Ltd.
语种: 英语
内容类型: 期刊论文
URI标识: http://ir.iccas.ac.cn/handle/121111/35715
Appears in Collections:其它_期刊论文

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作者单位: 1.Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China
2.Chinese Acad Sci, Inst Chem, Ctr Physicochem Anal & Measurement, Beijing 100190, Peoples R China
3.Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China
4.Jilin Univ, Coll Elect Sci & Engn, State Key Lab Integrated Optoelect, Changchun 130023, Peoples R China
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