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题名: Detecting trap states in planar PbS colloidal quantum dot solar cells
作者: Jin, Zhiwen1; Wang, Aiji2; Zhou, Qing1; Wang, Yinshu2; Wang, Jizheng1
刊名: SCIENTIFIC REPORTS
发表日期: 2016-11-15
卷: 6
收录类别: SCI
英文摘要: The recently developed planar architecture (ITO/ZnO/PbS-TBAI/PbS-EDT/Au) has greatly improved the power conversion efficiency of colloidal quantum dot photovoltaics (QDPVs). However, the performance is still far below the theoretical expectations and trap states in the PbS-TBAI film are believed to be the major origin, characterization and understanding of the traps are highly demanded to develop strategies for continued performance improvement. Here employing impedance spectroscopy we detect trap states in the planar PbS QDPVs. We determined a trap state of about 0.34 eV below the conduction band with a density of around 3.2 x 10(16) cm(-3) eV(-1). Temperature dependent open-circuit voltage analysis, temperature dependent diode property analysis and temperature dependent build-in potential analysis consistently denotes an below-bandgap activation energy of about 1.17-1.20 eV.
语种: 英语
内容类型: 期刊论文
URI标识: http://ir.iccas.ac.cn/handle/121111/35699
Appears in Collections:有机固体实验室_期刊论文

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作者单位: 1.Chinese Acad Sci, Beijing Natl Lab Mol Sci, Key Lab Organ Solids, Inst Chem, Beijing 100190, Peoples R China
2.Beijing Normal Univ, Dept Phys, Beijing 100875, Peoples R China
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