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题名: Electron Mobility Exceeding 10 cm(2) V-1 s(-1) and Band-Like Charge Transport in Solution-Processed n-Channel Organic Thin-Film Transistors
作者: Xu, Xiaomin1; Yao, Yifan2; Shan, Bowen1; Gu, Xiao1; Liu, Danqing1; Liu, Jinyu2; Xu, Jianbin3, 4; Zhao, Ni3; Hu, Wenping2, 5; Miao, Qian1, 4
刊名: ADVANCED MATERIALS
发表日期: 2016-07-13
卷: 28, 期:26, 页:5276-+
收录类别: SCI
英文摘要: Solution-processed n-channel organic thin-film transistors (OTFTs) that exhibit a field-effect mobility as high as 11 cm(2) V-1 s(-1) at room temperature and a band-like temperature dependence of electron mobility are reported. By comparison of solution-processed OTFTs with vacuum-deposited OTFTs of the same organic semiconductor, it is found that grain boundaries are a key factor inhibiting band-like charge transport.
语种: 英语
内容类型: 期刊论文
URI标识: http://ir.iccas.ac.cn/handle/121111/35592
Appears in Collections:有机固体实验室_期刊论文

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作者单位: 1.Chinese Univ Hong Kong, Dept Chem, Shatin, Hong Kong, Peoples R China
2.Chinese Acad Sci, Inst Chem, Zhongguancun North First St 2, Beijing 100190, Peoples R China
3.Chinese Univ Hong Kong, Dept Elect Engn, Shatin, Hong Kong, Peoples R China
4.Univ Grants Comm, Area Excellence Scheme, Inst Mol Funct Mat, Hong Kong, Hong Kong, Peoples R China
5.Tianjin Univ, Sch Sci, Dept Chem, Tianjin 300072, Peoples R China
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