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题名: Controllable thin-film morphology and structure for 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8BTBT) based organic field-effect transistors
作者: Huang, Yulan1; Sun, Jia1; Zhang, Jidong2; Wang, Shitan1; Huang, Han1; Zhang, Jian3; Yan, Donghang2; Gao, Yongli1, 4; Yang, Junliang1, 2
关键词: OFETs ; OMBD ; Solution-process ; Off-centre ; C8BTBT ; Morphology
刊名: ORGANIC ELECTRONICS
发表日期: 2016-09-01
卷: 36, 页:73-81
收录类别: SCI
英文摘要: Organic field-effect transistors (OFETs) based on organic semiconductor material 2,7-dioctyl[1] benzothieno[ 3,2-b] benzothiophene (C8BTBT) as the active layer were fabricated by using organic molecular beam deposition (OMBD) and solution-processed methods, in which the C8BTBT thin-film morphology could be well controlled. In OMBD method, C8BTBT thin-film morphology could be controlled by the thickness of organic semiconductor layer and the deposition rate, of which the high-quality C8BTBT thin film was obtained at a thickness of about 20 nm and at a deposition rate of 1.2 nm/min, resulting in an obvious mobility improvement from 2.8 x 10(-3) cm(2) V-1 s(-1) to 1.20 cm(2) V-1 s(-1). While in the solution-processing, C8BTBT thin-film morphology and thickness are related to the spin-coating speed and the substrate position in spin coater, i.e., in-centre and off-centre position. The off-centre spin-coating with an optimized speed produced large-size domain C8BTBT thin film and accordingly resulted in a mobility of 1.47 cm(2) V-1 s(-1). Furthermore, an additive polystyrene (PS) was added into C8BTBT solution could further improve the thin-film morphology with more metal-stable phase as well as improve the interface contact with the substrate SiO2, resulting in the highest mobility up to 3.56 cm(2) V-1 s(-1). The research suggested that C8BTBT-based OFETs with the mobility over 1.20 cm(2) V-1 s(-1) could be fabricated by using both OMBD and solution-processed methods through the thin-film morphology and structure optimization, which shows the potential applications in high-performance flexible and printed electronics. (C) 2016 Elsevier B.V. All rights reserved.
语种: 英语
内容类型: 期刊论文
URI标识: http://ir.iccas.ac.cn/handle/121111/35535
Appears in Collections:高分子物理与化学实验室_期刊论文

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作者单位: 1.Cent S Univ, Sch Phys & Elect, Hunan Key Lab Super Microstruct & Ultrafast Proc, Changsha 410083, Hunan, Peoples R China
2.Chinese Acad Sci, Changchun Inst Appl Chem, State Key Lab Polymer Phys & Chem, Changchun 130022, Peoples R China
3.Guilin Univ Elect Technol, Sch Mat Sci & Engn, Guilin 541004, Guangxi, Peoples R China
4.Univ Rochester, Dept Phys & Astron, Rochester, NY 14627 USA
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