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题名: Mass Production of Nanogap Electrodes toward Robust Resistive Random Access Memory
作者: Cui, Ajuan1; Liu, Zhe2; Dong, Huanli1; Yang, Fangxu1; Zhen, Yonggang1; Li, Wuxia2; Li, Junjie2; Gu, Changzhi2; Zhang, Xiaotao3, 4; Li, Rongjin3, 4; Hu, Wenping1, 3, 4
关键词: nanofabrication ; nanogap electrodes ; nonvolatile resistive switches
刊名: ADVANCED MATERIALS
发表日期: 2016-10-05
卷: 28, 期:37, 页:8227-8233
收录类别: SCI
英文摘要: Nanogap electrodes arrays are fabricated by combining atomic layer deposition, adhesive tape, and chemical etching. A unipolar nonvolatile resistive-switching behavior is identified in the nanogap electrodes, showing stable, robust performance and multibit storage ability, demonstrating great potential in ultrahigh-density storage. The formation and dissolution of Si conductive filaments and the migration of Au atoms is the mechanism behind the resistive switching.
语种: 英语
内容类型: 期刊论文
URI标识: http://ir.iccas.ac.cn/handle/121111/35518
Appears in Collections:有机固体实验室_期刊论文

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作者单位: 1.Chinese Acad Sci, Beijing Natl Lab Mol Sci, Key Lab Organ Solids, Inst Chem, Beijing 100190, Peoples R China
2.Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Collaborat Innovat Ctr Quantum Matter, Beijing 100190, Peoples R China
3.Tianjin Univ, Tianjin Key Lab Mol Optoelect Sci, Dept Chem, Sch Sci, Tianjin 300072, Peoples R China
4.Collaborat Innovat Ctr Chem Sci & Engn Tianjin, Tianjin 300072, Peoples R China
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