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题名: Controlled assembly of SiOx nanoparticles in graphene
作者: Geng, Dechao1; Wang, Huaping1; Yang, Jie1; Yu, Gui1
刊名: MATERIALS HORIZONS
发表日期: 2016-11-01
卷: 3, 期:6, 页:568-574
收录类别: SCI
英文摘要: Defects in graphene can be employed for shaping the properties of graphene, such as enhanced chemical activity and degraded electrical charge transport. Controlling the defects may allow us to precisely tune these properties and facilitate the fabrication of hybrid graphene structures. Here, we first demonstrate the controlled assembly of nonmetal SiOx nanoparticles induced by graphene etching, thus leading to the formation of lateral heterostructures from SiOx patterns and graphene. The etching process is purposely introduced on graphene for the formation of two-dimensional fractal and hexagonal holes, which serve as templates for the evolution of SiOx patterns. Through tuning of the graphene etching conditions, a series of novel SiOx patterns can be controllably formed. The etching-induced assembly of SiOx nanoparticles is also clearly evidenced to be an indicator for visualizing grain boundary in graphene, yielding a superior platform for sensing applications.
语种: 英语
内容类型: 期刊论文
URI标识: http://ir.iccas.ac.cn/handle/121111/35510
Appears in Collections:有机固体实验室_期刊论文

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作者单位: 1.Chinese Acad Sci, Beijing Natl Lab Mol Sci, Inst Chem, Beijing 100190, Peoples R China
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