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题名: Tailoring molecular weight of polymeric dielectric to enhance electron and hole mobilities in polymer field-effect transistors
作者: Mao, Zupan1, 2; Guo, Yunlong1; Chen, Huajie1; Zhang, Weifeng1; Yu, Gui1, 2
关键词: Field-effect transistor ; Dielectric ; Molecular weight
刊名: POLYMER
发表日期: 2016-09-02
卷: 99, 页:496-502
收录类别: SCI
英文摘要: Polymer field-effect transistors (PFETs) are promising candidates for future electronics due to easy and inexpensive fabrication. Poly{[N, N'-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]- alt-5,5'-(2,2'-bithiophene) [P(NDI2OD-T2)] based PFET devices with poly (methyl 2-methylpropenoate) (PMMA) as dielectric were fabricated successfully and it was found that the charge transporting behaviors were greatly impacted by the molecular weight of PMMA. Both hole and electron mobilities were improved simultaneously with increasing molecular weight of PMMA. In addition, similar result was also obtained in the PFETs based on a semiconductor, poly{[N, N'-bis(2-octyldodecyl)-1,4,5,8- naphthalenediimide-2,6-diyl-alt- 5,5'-di(thiophen-2-yl)-2,2'-(E)-2-(2-(thiophen-2-yl) vinyl) thiophene]}. Furthermore, the corresponding complementary-like inverters with PMMA displayed a gain value of 100. We studied the interface between the semiconducting and dielectric layers and found that the low trap density with higher-molecular-weight PMMA attributes to high mobilities of electrons and holes. This work provides a new way to fabricate high-performance PFETs and to improve performance of the complementary circuits through studying the effects of polymeric gate dielectrics, compared to the conventional view of semiconducting materials. (C) 2016 Elsevier Ltd. All rights reserved.
语种: 英语
内容类型: 期刊论文
URI标识: http://ir.iccas.ac.cn/handle/121111/35323
Appears in Collections:有机固体实验室_期刊论文

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作者单位: 1.Chinese Acad Sci, Inst Chem, Beijing Natl Lab Mol Sci, Beijing 100190, Peoples R China
2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
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