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题名: Bismuth Interfacial Doping of Organic Small Molecules for High Performance n-type Thermoelectric Materials
作者: Huang, Dazhen1, 2; Wang, Chao1, 2; Zou, Ye1; Shen, Xingxing1, 2; Zang, Yaping1, 2; Shen, Hongguang1, 2; Gao, Xike3; Yi, Yuanping1; Xu, Wei1; Di, Chong-an1; Zhu, Daoben1
关键词: chemical doping ; interfacial doping ; n-type materials ; organic semiconductors ; thermoelectrics
刊名: ANGEWANDTE CHEMIE-INTERNATIONAL EDITION
发表日期: 2016-08-26
卷: 55, 期:36, 页:10672-10675
收录类别: SCI
英文摘要: Development of chemically doped high performance n-type organic thermoelectric (TE) materials is of vital importance for flexible power generating applications. For the first time, bismuth (Bi) n-type chemical doping of organic semiconductors is described, enabling high performance TE materials. The Bi interfacial doping of thiophene-diketopyrrolopyrrole-based quinoidal (TDPPQ) molecules endows the film with a balanced electrical conductivity of 3.3Scm(-1) and a Seebeck coefficient of 585VK(-1). The newly developed TE material possesses a maximum power factor of 113Wm(-1)K(-2), which is at the forefront for organic small molecule-based n-type TE materials. These studies reveal that fine-tuning of the heavy metal doping of organic semiconductors opens up a new strategy for exploring high performance organic TE materials.
语种: 英语
内容类型: 期刊论文
URI标识: http://ir.iccas.ac.cn/handle/121111/35322
Appears in Collections:有机固体实验室_期刊论文

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作者单位: 1.Chinese Acad Sci, Inst Chem, CAS Key Lab Organ Solids, Dept Beijing Natl Lab Mol Sci, Beijing 100190, Peoples R China
2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
3.Chinese Acad Sci, Shanghai Inst Organ Chem, Key Lab Synthet & Self Assembly Chem Organ Funct, Shanghai 200032, Peoples R China
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