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题名: High-Performance Field-Effect Transistors Fabricated with Donor-Acceptor Copolymers Containing S center dot center dot center dot O Conformational Locks Supplied by Diethoxydithiophenethenes
作者: Zhang, Weifeng1; Mao, Zupan1; Huang, Jianyao1; Gao, Dong1; Yu, Gui1
刊名: MACROMOLECULES
发表日期: 2016-09-13
卷: 49, 期:17, 页:6401-6410
收录类别: SCI
英文摘要: Constructing planar pi-conjugated backbone is of critical importance for polymeric semiconductors to obtain high charge carrier mobility. In this regard, suitable introduction of noncovalent interactions is one of useful approaches. Herein, we report a series of donor acceptor copolymers based on diethoxydithiophenethene (EDTE), namely PEDTEn (n = 1, 2, and 3), containing multiple O center dot center dot center dot H-C and S center dot center dot center dot O conformational locks, where the latter ones are supplied by the EDTE units. PEDTEn owns planar conjugated backbones with suitable HOMO energy, levels (ca. - 5.20 eV) and strong absorption behaviors along with enhanced solution processability. High-performance field-effect transistors based on the copolymers exhibited a high hole mobility of up to 5.37 cm(2) V-1 s(-1), which is among the highest values of semiconducting polymers based on the concept of conformational locks. AFM and GIXRD experiments reveal :that PEDTEn could form crystalline and close packing thin films with a pi-pi stacking distance of down to 3.78 angstrom.
语种: 英语
内容类型: 期刊论文
URI标识: http://ir.iccas.ac.cn/handle/121111/35260
Appears in Collections:有机固体实验室_期刊论文

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作者单位: 1.Chinese Acad Sci, Beijing Natl Lab Mol Sci, Inst Chem, Beijing 100190, Peoples R China
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