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ICCAS OpenIR  > 分子纳米结构与纳米技术实验室  > 期刊论文
题名: Selective Growth of Covalent Organic Framework Ultrathin Films on Hexagonal Boron Nitride
作者: Sun, Bing1, 2, 3; Li, Jing1, 2, 3; Dong, Wei-Long1, 2, 3; Wu, Mei-Ling1, 2, 3; Wang, Dong1, 2
刊名: JOURNAL OF PHYSICAL CHEMISTRY C
发表日期: 2016-07-14
卷: 120, 期:27, 页:14706-14711
收录类别: SCI
英文摘要: Incorporating the intriguing covalent organic framework (COF) into devices and performing their advanced electronic nature are still challenging. Herein, we demonstrate the direct growth of 2D full-conjugated COF ultrathin films on dielectric hexagonal boron nitride (hBN) for the first time and study the carrier transporting characteristics of pi-conjugated COF films. Under the optimized solvothermal conditions, few-layered COF-366 films with the covalent connection of tetra(p-aminophenyl)porphyrin and terephthalaldehyde are selectively fabricated on mechanically exfoliated hBN flakes. COF-366 films on hBN substrate present red-shift absorption edge and decreased band gap compared to the bulk COF powders. The organic field-effect transistor device based on COF-366 ultrathin films demonstrates p-type current modulation with an on/off ratio of 10(5) and mobility of 0.015 cm(2) V-1 s(-1). The present work represents a universal method for COF film growth on dielectric surface and also provides important insight into the carrier transport of 2D pi-conjugated system and potential applications of 2D COFs in electronics.
语种: 英语
内容类型: 期刊论文
URI标识: http://ir.iccas.ac.cn/handle/121111/35170
Appears in Collections:分子纳米结构与纳米技术实验室_期刊论文

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作者单位: 1.Chinese Acad Sci, Inst Chem, Key Lab Mol Nanostruct & Nanotechnol, Beijing 100190, Peoples R China
2.Chinese Acad Sci, Inst Chem, Beijing Natl Lab Mol Sci, Beijing 100190, Peoples R China
3.Univ CAS, Beijing 100049, Peoples R China
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