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Elimination of photon quenching by a transition layer to fabricate a quenching-shield sandwich structure for 800 nm excited upconversion luminescence of nd3+-sensitized nanoparticles
Zhong YT(钟业腾); Tian G(田甘); Gu ZJ(谷战军); Yang YJ(杨一君); Gu L(谷林); Zhao YL(赵禹亮); Ma Y(马颖); Yao JN(姚建年)
2013-12-12
Source PublicationAdv. Mater.
Volume26Issue:18Pages:2831-2837
Contribution Rank第一
description.department光化学-姚建年组,光化学院重点实验室
Subject Area物理化学
Document Type期刊论文
Identifierhttp://ir.iccas.ac.cn/handle/121111/28791
Collection光化学实验室
Affiliation中国科学院化学研究所
Recommended Citation
GB/T 7714
Zhong YT,Tian G,Gu ZJ,et al. Elimination of photon quenching by a transition layer to fabricate a quenching-shield sandwich structure for 800 nm excited upconversion luminescence of nd3+-sensitized nanoparticles[J]. Adv. Mater.,2013,26(18):2831-2837.
APA 钟业腾.,田甘.,谷战军.,杨一君.,谷林.,...&姚建年.(2013).Elimination of photon quenching by a transition layer to fabricate a quenching-shield sandwich structure for 800 nm excited upconversion luminescence of nd3+-sensitized nanoparticles.Adv. Mater.,26(18),2831-2837.
MLA 钟业腾,et al."Elimination of photon quenching by a transition layer to fabricate a quenching-shield sandwich structure for 800 nm excited upconversion luminescence of nd3+-sensitized nanoparticles".Adv. Mater. 26.18(2013):2831-2837.
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